Precipitation and redistribution of oxygen in Czochralski-grown silicon
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (5) , 483-486
- https://doi.org/10.1063/1.91739
Abstract
Thermally induced oxygen precipitation and redistribution phenomena in Czochralski‐grown silicon crystals are investigated by means of transmission electron microscopy and differential‐infrared absorption (DIR). In order to investigate the role of thermal history and the oxygen supersaturated condition for oxygen precipitation, a two‐step annealing process is adopted. Evident existence of SiO2 (crystobalite) is observed in as‐grown crystals by DIR at 1225 cm−1. As a result, it is ascertained that oxygen precipitation does not occur by homogeneous nucleation depending on the ratio of supersaturated oxygen but occurs by heterogeneous nucleation. A model of a grown‐in nucleus for oxygen precipitation by heat treatment is also proposed.Keywords
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