Approximation of junction field-effect transistor characteristics by a hyperbolic function
- 1 October 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 13 (5) , 724-726
- https://doi.org/10.1109/jssc.1978.1051128
Abstract
To analyze nonlinear circuits using the junction field-effect transistor (JFET), a new empirical equation is proposed to relate drain current to drain-source and gate-source voltages. This equation is a simpler form than the Shockley equations, and requires only drain characteristics to evaluate the constant /spl alpha/ in this equation. Good agreement is obtained between the predicted and experimental results.Keywords
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