HREM study of ion implantation in 6H-SiC at high temperatures

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Abstract
Implantation of aluminium into 6H-SiC at high temperature and at a high dose results in the formation of aluminium precipitates with a definite orientation relationship to the matrix. [2110]6H–SIC//[011]Al and [000]6H–SIC//[011]Al Under these implantation conditions the polytypic transformation of 6H-SiC into 3C no longer occurs by gliding but through the generation of interstitial semi-loops at the precipitates. It is shown that the formation of Al precipitates is strongly dependent on the dose of implantation. In the absence of precipitates in the 6H–SiC the usual glide mechanism for the polytypic transformation is maintained. These conclusions are based on highresolution electron microscopy observations.

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