Chemical vapor deposition of a silicon nitride layer with an excellent interface by NH3 plasma treatment
- 28 March 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (13) , 1068-1070
- https://doi.org/10.1063/1.99213
Abstract
A new metal‐insulator‐semiconductor field‐effect transistor (MISFET) fabrication technology has been developed by using a silicon nitride insulator. MISFET’s with high field‐effect mobility were obtained by exposing a silicon surface to a NH3 plasma before silicon nitride (SiNx) deposition as a gate insulator in a rf plasma. An Auger spectrum showed possible nitridation of silicon by NH3 plasma treatment.Keywords
This publication has 2 references indexed in Scilit:
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- Advantages of thermal nitride and nitroxide gate films in VLSI processIEEE Transactions on Electron Devices, 1982