Formation of cBN films by ion beam assisted deposition

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Abstract
Boron nitride films were deposited by using ion beams of nitrogen mixed with argon and simultaneous evaporation of boron. The effect of deposition conditions on the formation of the cBN phase were also studied. The acceleration voltage of ions was in the range of 0.3–7 kV. The deposited films were analyzed by infrared absorption spectra, x-ray diffraction, and transmission electron diffraction. The infrared absorption spectra showed a strong absorption at 1080 cm−1, indicating a formation of the cBN film. It seemed that the amount of the cBN phase in deposited films largely increases with decreases in acceleration voltage, and that the use of ion beams of nitrogen mixed with argon is effective for the formation of the cBN phase. Deposited films exhibited electron diffraction rings with interplanar spacings that agreed well with the values of cBN having a zinc blende structure. Deposited films also exhibited x-ray diffraction patterns that agreed with the (111) plane of cBN. The micro Vickers hardness of the obtained film was 4500–5500.

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