The GaAs dual-gate FET with low noise and wide dynamic range

• 1 January 1973
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1973.188649

Abstract

Keywords

• SCHOTTKY BARRIER
• STABILITY
• PACKAGING
• NOISE FIGURE
• DESIGN THEORY
• GALLIUM ARSENIDE
• DYNAMIC RANGE