High-gain wide-gap-emitter Ga 1 - x Al x As-GaAs phototransistor
- 5 August 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (16) , 395-396
- https://doi.org/10.1049/el:19760303
Abstract
A Ga1-xAlxAs-GaAs heterostructure phototransistor has been manufactured and tested. The device is an n-p-n structure employing the ‘wide-gap-emitter’ effect. High internal current gain (>2000) has been achieved.Keywords
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