Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)
- 1 November 1999
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 27 (1) , 9-18
- https://doi.org/10.1080/10584589908228451
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- SrBi 2 Ta 2 O 9 memory capacitor on Si with a silicon nitride bufferApplied Physics Letters, 1998
- Physics of the ferroelectric nonvolatile memory field effect transistorJournal of Applied Physics, 1992
- Ferroelectric MemoriesScience, 1989
- An experimental 512-bit nonvolatile memory with ferroelectric storage cellIEEE Journal of Solid-State Circuits, 1988
- A new ferroelectric memory device, metal-ferroelectric-semiconductor transistorIEEE Transactions on Electron Devices, 1974