Transit time parameter extraction for the HICUM bipolar compact model
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper presents a extraction procedure for the transit time parameters of the HICUM bipolar compact model. The extraction routines use as input the measured small-signal current gain in the -20 dB/decade falloff region as a function of the collector current and the collector-emitter (or collector-base) voltage. All HICUM transit time parameters are extracted in a straightforward manner, no optimisation is necessary. Especially the critical current value ICK is determined in a self consistent way.Keywords
This publication has 4 references indexed in Scilit:
- The HiCuM Bipolar Transistor ModelPublished by Springer Nature ,2010
- Physics-based minority charge and transit time modeling for bipolar transistorsIEEE Transactions on Electron Devices, 1999
- An Integral Charge Control Model of Bipolar TransistorsBell System Technical Journal, 1970
- A theory of transistor cutoff frequency (fT) falloff at high current densitiesIRE Transactions on Electron Devices, 1962