Large excited state Stokes shift in crescent-shaped AlGaAs/GaAs quantum wires
- 13 October 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (15) , 2130-2132
- https://doi.org/10.1063/1.119358
Abstract
The Stokes shifts of the ground and the excited states in a crescent-shaped AlGaAs/GaAs quantum wire (QWR) are investigated using photoluminescence (PL) and PL excitation spectroscopy. The first excited electron to heavy-hole transition showed a Stokes shift (∼17 meV) considerably larger than that of ground state-related transitions (∼4 meV). This is a quite different phenomenon than that observed in two dimensional quantum well structures, and can be explained by the spatial separation of wave functions with different confinement energies in crescent-shaped QWRs.Keywords
This publication has 9 references indexed in Scilit:
- Polarization Anisotropy and Valence Band Mixing in Semiconductor Quantum WiresPhysical Review Letters, 1997
- Fabrication of highly uniform quantum wire superlattices by flow rate modulation epitaxy on V-grooved substratesJournal of Crystal Growth, 1997
- Temperature dependent pohotoluminescence investigation of AlGaAs/GaAs quantum wires grown by flow rate modulation epitaxyApplied Physics Letters, 1995
- Carrier capture efficiency of AlGaAs/GaAs quantum wires affected by composition nonuniformity of an AlGaAs barrier layerApplied Physics Letters, 1995
- Flow rate modulation epitaxy of AlGaAs/GaAs quantum wires on nonplanar substrateApplied Physics Letters, 1995
- Quantum Cascade LaserScience, 1994
- Topography of high- and low-index GaAs surfacesPhysical Review B, 1992
- Stimulated emission in semiconductor quantum wire heterostructuresPhysical Review Letters, 1989
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982