High-performance millimetre-wave GaAs power MESFET prepared by gas source molecular beam epitaxy

8 October 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (21) , 1141-1142
https://doi.org/10.1049/el:19870795

Abstract

A state-of-the-art GaAs power MESFET prepared by gas source molecular beam epitaxy is described. The device showed DC transconductance of 180mS/mm and generated power density of 0–6W/mm at 35 GHz, with 5dB gain and 28% power-added efficiency.

Keywords

5 DB
180 MS/MM
35 GHZ
POWER DENSITY
GAS SOURCE MOLECULAR BEAM EPITAXY
DC TRANSCONDUCTANCE
MILLIMETRE-WAVE GAAS POWER MESFET
GAAS
0.6 W/MM