New pseudomorphic N − /N + GaAs/InGaAs/GaAs power HEMT with high breakdown voltages
- 4 July 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (14) , 1303-1305
- https://doi.org/10.1049/el:19910815
Abstract
A new pseudomorphic N−/N+ GaAs/InGaAs/GaAs power HEMT is described that has high breakdown voltage VB of more than 20 V and full channel current If of 460 mA/mm which allows the simultaneous improvement of maximum power handling capability, linear gain GL and power-added efficiency Nadd over GaAs FETs with the same product of doping concentration and thickness of the doped layer under the gate. The 10.5 mm wide device delivered a record maximum output power of 4.7 W from a single HEMT chip with GL of 8 dB and Nadd of 25% at 14.25 GHz.Keywords
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