Abstract
Reflection high‐energy electron diffraction patterns show that the crystal orientation of MgO films deposited on amorphous substrates at 30 °C at normal vapor incidence varies with film thickness. Films in the thickness range of 50 Å to less than 1000 Å have a random orientation. As the film thickness is increased a 〈 111 〉 preferred orientation develops. The 〈 111 〉 preferred orientation remains unchanged upon annealing in vacuum at a temperature in the range from 400 to 550 °C for 1 h. The origin of these orientations is discussed.

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