Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2B) , L239-242
- https://doi.org/10.1143/jjap.30.l239
Abstract
A-Si:H films with narrow optical band gap down to 1.50 eV along with low hydrogen content down to 1 at% were fabricated using the concept of “chemical annealing”; alternating deposition with exposure to atomic hydrogen. Reduction in the density of the valence band tail states was confirmed by a time-of-flight experiment which exhibited non-dispersive behavior in the transient photocurrent curves and significant enhancement in drift mobility to 0.2 cm2/V·s at 300 K for holes. Remarkable improvement in the light induced metastability was also confirmed in some specimens annealed well, maintaining a photoconductivity 10-4 S/cm under AM1 white light illumination.Keywords
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