Voltage-dependent reverse current in high resistivity silicon surface-barrier diodes
- 15 January 1974
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 114 (2) , 241-244
- https://doi.org/10.1016/0029-554x(74)90539-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Diode characteristics and edge effects of metal-semiconductor diodesSolid-State Electronics, 1973
- Measurement of drift velocity of electrons in silicon by exciting a diode structure with short superradiant laser pulsesIEEE Transactions on Electron Devices, 1970
- Electric field profile and electron drift velocities in lithium drifted siliconNuclear Instruments and Methods, 1969
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953