Microstrip IMPATT oscillator with high locking figure of merit

1 January 1969

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 57 (11) , 2052-2053
https://doi.org/10.1109/proc.1969.7452

Abstract

Microstrip IMPATT oscillators have been built at X-band and V-band in order to obtain hybrid integrated power sources for locked amplifier applications. It is shown that using a microstrip circuit shorter than a half-wavelength gives the highest locking figure of merit and therefore the largest possible locking range for a given gain. A figure of merit of 0.10 has been obtained for a locking gain of 20 dB.

Keywords

MICROSTRIP
OSCILLATORS
RADIO FREQUENCY
DIODES
COUPLING CIRCUITS
COAXIAL COMPONENTS
IMPEDANCE
POWER TRANSMISSION LINES
DISTRIBUTED PARAMETER CIRCUITS
SOLID STATE CIRCUITS

This publication has 0 references indexed in Scilit: