Raman scattering from electronic excitations in periodically δ-doped GaAs
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 251-254
- https://doi.org/10.1016/0039-6028(90)90303-p
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensionsSemiconductor Science and Technology, 1988
- Spatial localization of impurities in δ-doped GaAsApplied Physics Letters, 1988
- Subbands in Space-Charge Layers on Narrow Gap Semiconductors: Validity of Semiclassical ApproximationJournal of the Physics Society Japan, 1985
- Light scattering by two-dimensional electron systems in semiconductorsSurface Science, 1982
- Intersubband spectroscopy of two dimensional electron gases: Coulomb interactionsSolid State Communications, 1980