On the synthesis of metastable A-15 ’’Nb3Si’’ by ion implantation and on its superconducting transition temperature

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Abstract
The authors have found a new technique for the synthesis of metastable compounds of well‐defined composition: namely, ion implantation of a selected element into the desired crystal structure. [M.T. Clapp and R.M. Rose, Appl. Phys. Lett. 33, 205 (1978)]. Starting with a substrate material of A‐15 Nb3Al0.9Si0.1, two basic approaches were tried towards the formation of A‐15 Nb3Si by Si implantation: (1) direct replacement of the Al by Si and (2) implantation into a surface layer depleted of Al. This latter approach proved to be the most successful. It consisted of removing the Al by a diffusion anneal and replacing the Al deficiency by sequential Si implantations. Upon subsequent heat treatment a surface layer of A‐15 Nb3Al0.2Si0.8 was produced. Details of the experimental procedure and a discussion of the superconducting transition temperature measurements of the implanted surfaces are presented.