DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs
- 1 November 2008
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 517 (1) , 6-9
- https://doi.org/10.1016/j.tsf.2008.08.020
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Review of low-frequency noise behaviour of polysilicon emitter bipolar junction transistorsIEE Proceedings - Circuits, Devices and Systems, 2004
- SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systemsIEEE Transactions on Electron Devices, 2003
- Low-frequency noise in polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1995