Minority-carrier-lifetime determination in Hg0.68Cd0.32Te
- 1 December 1978
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (12) , 6182-6184
- https://doi.org/10.1063/1.324548
Abstract
Values for the electron minority‐carrier lifetime τn in Hg0.68Cd0.32Te photodiodes were independently determined by two indirect techniques. Measurements of the junction resistance under zero bias at 210 K yield τn=2.3×10−7 sec, and diffusion length measurements give τn=2.9×10−7 sec. These results are in agreement with our calculations for radiative lifetime in p‐type Hg0.68Cd0.32Te. Similar measurements on gold‐doped material indicate a lifetime shorter by almost three orders of magnitude, and it is suggested that this is due to recombination associated with Shockley‐Read centers.This publication has 9 references indexed in Scilit:
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