Electromigration in aluminum films prepared with a high rate magnetron sputtering cathode

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Abstract
Electromigration has been studied in pure aluminum films prepared by high rate magnetron sputtering. Deposition was performed under various bias and wafer preheat conditions, including those producing planarization of the aluminum. Film structure was determined by transmission electron microscopy (TEM) and x-ray diffraction (XRD). Films prepared with high bias power exhibited a relatively narrow grain size distribution; those prepared without bias had a bimodal grain size distribution. Annealing under normal alloying conditions led to the development of small voids in the latter, and the behavior of these during electromigration was ascertained.

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