High temperature behavior of Pt and Pd on GaN
- 1 April 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (7) , 3134-3137
- https://doi.org/10.1063/1.364091
Abstract
We report on the thermal stability of Pt and Pd thin films on GaN up to 800 °C. We have found that for Pt thin films submicron size metal spheres form at temperatures as low as 600 °C and the film turns into discontinuous islands at 725 °C and above. Pd begins to form islands above 700 °C and areas of the film begin to delaminate due to thermally generated compressive stress. The general behavior of these films is that found for most metal films on ceramics, suggesting that metals on GaN do not react as they typically do on common elemental and compound semiconductors. This ceramic-like behavior must be considered when determining which metals may act as good electrical contacts for GaN, especially for high temperature applications or alloyed contacts.This publication has 14 references indexed in Scilit:
- Estimated phase equilibria in the transition metal-Ga-N systems: Consequences for electrical contacts to GaNJournal of Electronic Materials, 1996
- Near-ideal platinum-GaN Schottky diodesElectronics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxyApplied Physics Letters, 1995
- High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting DiodesScience, 1995
- Schottky barrier photodetector based on Mg-doped p-type GaN filmsApplied Physics Letters, 1993
- Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin filmsApplied Physics Letters, 1993
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- STRUCTURE AND CHEMISTRY OF THE TI / SAPPHIRE INTERFACEPublished by Elsevier ,1990
- Agglomeration of thin platinum films on a zirconia substrateJournal of Physics D: Applied Physics, 1987