Photoluminescence of bulk and epitaxial GaAs
- 1 June 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 89 (1) , 21-27
- https://doi.org/10.1016/0022-0248(88)90067-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Donor identification in bulk gallium arsenideApplied Physics Letters, 1988
- Residual acceptor assessment in as-grown bulk GaAs by Raman and selective pair luminescence spectroscopy: A comparative studyApplied Physics Letters, 1986
- Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAsApplied Physics Letters, 1986
- Characterization of high-purity Si-doped molecular beam epitaxial GaAsJournal of Applied Physics, 1985
- Electronic Raman spectra of shallow acceptors in semi-insulating GaAsPhysical Review B, 1985
- Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopySolid State Communications, 1981
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975