Electrical Switching Device Based on Charge-Controlled Double Injection
- 15 February 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 1 (4) , 1583-1587
- https://doi.org/10.1103/physrevb.1.1583
Abstract
A new switching device is predicted which is based on field-induced double injection caused by accumulated charges attempting to escape through poor contacts. While electrical characteristics are predicted which are essentially identical to those recently reported by Ovshinsky, the present device is explicable in terms of conventional physical phenomena which do not necessarily require disordered materials.Keywords
This publication has 3 references indexed in Scilit:
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Volt-current characteristics for tunneling through insulating filmsJournal of Physics and Chemistry of Solids, 1962
- Theory of Field Emission from SemiconductorsPhysical Review B, 1962