A 2Gs/s HBT sample and hold
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 199-202
- https://doi.org/10.1109/gaas.1988.11057
Abstract
The authors describe a Schottky-diode sample-and-hold (S/H) circuit fabricated in an AlGaAs-GaAs heterojunction bipolar transistor (HBT) process. The transistors exhibit an f/sub T/ of over 50 GHz. The S/H circuit operates at up to 2G samples/s, with distortion below-40 dBc up to and beyond the Nyquist input frequency of 1 GHz.<>Keywords
This publication has 0 references indexed in Scilit: