A study of the growth and shrinkage of stacking faults in SIMOX
- 1 January 1995
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 29 (1-3) , 24-28
- https://doi.org/10.1016/0921-5107(94)04016-w
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Novel Approach to Defect Etching in Thin Film Silicon‐on‐InsulatorJournal of the Electrochemical Society, 1993
- Reduction of kink effect in thin-film SOI MOSFETsIEEE Electron Device Letters, 1988
- Kinetics of growth of the oxidation stacking faults: The capture of interstitials by partial dislocationJournal of Applied Physics, 1982
- The influence of annealing ambient on the shrinkage kinetics of oxidation-induced stacking faults in siliconApplied Physics Letters, 1979
- A New Preferential Etch for Defects in Silicon CrystalsJournal of the Electrochemical Society, 1977
- Oxidation induced stacking faults in n- and p-type (100) siliconJournal of Applied Physics, 1977
- Anomalous temperature effect of oxidation stacking faults in siliconApplied Physics Letters, 1975
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972
- Diffraction contrast analysis of two-dimensional defects present in silicon after annealingPhilosophical Magazine, 1966