Determination of spatial surface state density distribution in MOS and SIMOS transistors after channel hot electron injection
- 29 April 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (9) , 372-374
- https://doi.org/10.1049/el:19820255
Abstract
The charge pumping technique has been adapted for the determination of the spatial distribution of the interface state density in the channel region of short channel MOS or SIMOS transistors. This spatial distribution is shown to be modified by channel hot electron injection and provides information on the location and width of the injection region.Keywords
This publication has 1 reference indexed in Scilit:
- Non volatile semiconductor memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981