Far-infrared photoconductivity of uniaxially stressed germanium
- 15 October 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (8) , 496-497
- https://doi.org/10.1063/1.89755
Abstract
The influence of uniaxial stress on the extrinsic photoconductivity of gallium‐doped germanium has been investigated. It has been found that the long‐wavelength cutoff is shifted from 114 μm for zero stress to 200 μm for a uniaxial stress of 6.6×103 kg/cm2 along a [100] direction. At this value of stress the responsivity was ∼2×104 V/W and the NEP was ∼2×10−11 W/Hz1/2 at 190 μm.Keywords
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