A simple diode model including conductivity modulation
- 1 March 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Circuit Theory
- Vol. 18 (2) , 233-240
- https://doi.org/10.1109/tct.1971.1083246
Abstract
A simple lumped component diode model is presented including a representation of conductivity modulation, in addition to the usual characterization by diffusion capacitance, transition capacitance, and an ideal junction. It is shown that this model employed in a switching circuit exhibits the overshoot and oscillation characteristic of diodes at high forward currents, as well as the usual charge storage effects for the reverse transient. Using small-signal analysis it is shown that in some cases the model possesses an inductive impedance which is also characteristic of diodes at high forward currents.Keywords
This publication has 4 references indexed in Scilit:
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- An analysis of inertial inductance in a junction diodeIRE Transactions on Electron Devices, 1960
- On the switching transient in the forward conduction of semiconductor diodesIRE Transactions on Electron Devices, 1957
- On the Inductive Part in the a.c. Characteristics of the Sermiconductor DiodesJournal of the Physics Society Japan, 1955