Ion-implanted complementary IMPATT diodes for D-band

1 January 1974

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 62 (9) , 1295-1296
https://doi.org/10.1109/proc.1974.9620

Abstract

Complementary silicon single-drift-region IMPATT diodes designed to operate above 100 GHz have been fabricated with ion-implanted dopant profiles. Continuous-wave output powers of 140 mW with 2.8-percent conversion efficiencies were obtained at 142 GHz.

Keywords

DIODES
SILICON
BORON
EPITAXIAL LAYERS
EIGENVALUES AND EIGENFUNCTIONS
ACCELERATION
SUBSTRATES
EQUATIONS
ESTIMATION THEORY
COMMUNICATION SYSTEM CONTROL