Impedance characteristics of applied-Bion diodes

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Abstract
A new model of relativistic Applied-B ion diodes is presented that appears to explain a previously discovered empirical scaling law. The model is based on a self-consistent calculation of the diamagnetic effect of virtual-cathode location coupled with the assumption of a uniform electron-density profile in the sheath. The success of this model greatly increases our understanding of the undesirable phenomenon of impedance collapse in applied-B diodes and suggests a simple measure for improving their performance.