High-power 0.98μm GaInAs strained quantum well lasers for Er 3+ -doped fibre amplifier
- 9 November 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (23) , 1563-1565
- https://doi.org/10.1049/el:19891050
Abstract
High-power GalnAs strained quantum well lasers with an emission wavelength of 0.98μ, suitable for Er3+-doped fibre amplifier pumping, have been fabricated. A threshold current of 15 mA and a peak output power as high as 85 mW have been obtained for the ridge waveguide structure with AR/HR facet coating. Highly efficient pumping for the 1.536 μm signals has been confirmed.Keywords
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