Resonance acceptor states in uniaxially strained semiconductors

1 October 1997

journal article
Published by Pleiades Publishing Ltd in Semiconductors

Vol. 31 (10) , 1014-1020
https://doi.org/10.1134/1.1187016

Abstract

The energies and lifetimes of resonance states that arise in a uniaxially strained semiconductor are considered in the framework of the zero-radius potential model. The results obtained can be used di

Keywords

QUALITATIVE ANALYSIS
GROUND STATE
OSCILLATIONS

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