High-temperature investigations of CdS single crystals. I. Electron concentration, Cd solubility, and charge of intrinsic defects
- 16 February 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 33 (2) , 765-771
- https://doi.org/10.1002/pssa.2210330236
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Effect of Component Vapour Pressure on Electron Concentration and Mobility in Cds Single CrystalsPhysica Status Solidi (a), 1974
- Self-diffusion and the defect structure of cadmium sulfideJournal of Solid State Chemistry, 1971
- High-temperature hall effect measurements in indium-doped cadmium sulfide in sulfur vaporJournal of Solid State Chemistry, 1971
- Conduction electron hyperfine interaction in semiconducting CdSJournal of Physics and Chemistry of Solids, 1970
- CHARACTERIZATION OF FOREIGN ATOMS AND NATIVE DEFECTS IN SINGLE CRYSTALS OF CADMIUM TELLURIDE BY HIGH-TEMPERATURE CONDUCTIVITY MEASUREMENTSApplied Physics Letters, 1969
- The Dependence of Cd Diffusion and Electrical Conductivity in CdS on Cd Partial Pressure and TemperaturePhysica Status Solidi (b), 1969
- The high temperature conductivity of ZnTe in zinc vaporJournal of Physics and Chemistry of Solids, 1964
- Self‐Activated Semiconductivity in CdS Single CrystalsPhysica Status Solidi (b), 1963
- Vapor-Phase Growth of Single Crystals of II–VI CompoundsJournal of Applied Physics, 1961
- Method for Heating Alkali Halides and Other Solids in Vapors of Controlled PressureReview of Scientific Instruments, 1961