Effect of reactive ion beam etching damage on exciton absorption recovery time of multiple quantum well wires
- 1 March 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (2) , 183-186
- https://doi.org/10.1116/1.586701
Abstract
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