I-V characteristics for Silicon Schottky solar cells

1 January 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 63 (1) , 206-208
https://doi.org/10.1109/PROC.1975.9727

Abstract

A special-layered Schottky solar cell has been constructed which produces 9.5-percent sunlight efficiency over a 1-cm²area. This solar cell has a fill factor of 0.60 compared to 0.58 for a commercial p-n silicon cell. Series resistance of 5 Ω is shown to reduce the theoretical fill factor from 0.67 to 0.42 for a Schottky cell. The diode quality factor n is shown to significantly increase open-circuit voltage and yet not appreciably influence the fill factor.

Keywords

SILICON
PHOTOVOLTAIC CELLS
PLASMA TRANSPORT PROCESSES
NONHOMOGENEOUS MEDIA
FLUCTUATIONS
EQUATIONS
LIGHT SCATTERING
MAGNETIC FIELDS
TELLURIUM
ROUGH SURFACES

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