Diffusion and self-gettering of ion-implanted copper in polyimide
- 15 December 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (12) , 5816-5820
- https://doi.org/10.1063/1.343652
Abstract
The diffusion of ion-implanted Cu in Kapton films has been studied by Rutherford backscattering. At low temperatures, diffusion is thermally activated with an energy of 0.41 eV and a diffusion constant D of about 10−18 cm2/s at room temperature. Above 460 K the implanted profiles narrow dramatically instead of continuing to spread, a process interpreted in terms of cluster nucleation at the polymer’s β′ transition temperature. Subsequent diffusion of the clusters above 525 K has an activation energy of 1.91 eV. The ion implantation causes discernible surface damage to the polyimide.This publication has 24 references indexed in Scilit:
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