Mechanisms of Charge Trapping at a Dielectric Surface: Resonance Stabilization and Dissociative Attachment

31 October 1988

journal article
research article
Published by American Physical Society (APS) in Physical Review Letters

Vol. 61 (18) , 2096-2098
https://doi.org/10.1103/physrevlett.61.2096

Abstract

A solid Kr film partially covered with

O_{2}

molecules is charged by a 0- to 10-eV electron beam. The electron energy dependence of the trapping cross section indicates that surface charging in the 0-2-eV range is due to stabilization via the

{}^{2}Π_{g} {O_{2}}^{-}

resonance, whereas in the 4-10-eV region, it is due to

O^{-} ({}^{2}P)

formed by dissociation of the intermediate

{}^{2}Π_{u}

state of

O_{2}^{-}

Keywords

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