The recombination of hot carriers —theoretical
- 1 December 1961
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 22, 149-153
- https://doi.org/10.1016/0022-3697(61)90255-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Disturbances of carrier concentration in high electric fieldJournal of Physics and Chemistry of Solids, 1961
- Theory of Hot-Electron Effects in Many-Valley Semiconductors in the Region of High Electric FieldPhysical Review Letters, 1960
- Lattice mobility of hot carriersJournal of Physics and Chemistry of Solids, 1959
- Copper in Germanium: Recombination Center and Trapping CenterPhysical Review B, 1956
- Electron Capture Probability of the Upper Copper Acceptor Level in GermaniumPhysical Review B, 1955
- Effect of Nickel and Copper Impurities on the Recombination of Holes and Electrons in GermaniumThe Journal of Physical Chemistry, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Mobilities of Electrons in High Electric FieldsPhysical Review B, 1951