Radiation-Induced Second Breakdown in Transistors
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 16 (6) , 120-123
- https://doi.org/10.1109/TNS.1969.4325514
Abstract
Second breakdown was induced in the 2N914 transistor by electron pulses from a 10 MeV Linac. The typical time delay for the initiation of breakdown was observed as well as the reduction in time delay with increasing voltage. In addition, a transistor subject to a non-limited breakdown was observed to fail by a collector-to-emitter short. Threshold voltages for second breakdown were observed to decrease with increasing dose rate ir the BV and BV modes. At 1 or 2 × 1010 rad(Si)/sec the voltage decreased below the rated (BVCEO) voltage of the 2N914 transistor.Keywords
This publication has 1 reference indexed in Scilit:
- Second breakdown—A comprehensive reviewProceedings of the IEEE, 1967