Photoreflectance of Multiple Quantum Wells: Modulation Intensity Dependence
- 1 August 1989
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 154 (2) , K187-K190
- https://doi.org/10.1002/pssb.2221540261
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Optical investigation of highly strained InGaAs-GaAs multiple quantum wellsJournal of Applied Physics, 1987
- Photoreflectance spectroscopy of GaAs doping superlatticesSolid State Communications, 1987
- Determination of band offsets in AlGaAs/GaAs and InGaAs/GaAs multiple quantum wellsJournal of Vacuum Science & Technology B, 1987
- Photoreflectance and photoreflectance-excitation spectroscopy of a GaAs/As multiple-quantum-well structurePhysical Review B, 1987
- Investigation of GaAs/(Al,Ga)As multiple quantum wells by photoreflectanceJournal of Applied Physics, 1987
- Photoreflectance modulation mechanisms in GaAs-As multiple quantum wellsPhysical Review B, 1987
- A theory for the electroreflectance spectra of quantum well structuresJournal of Physics C: Solid State Physics, 1986
- Observation of symmetery forbidden transitions in the room temperature photoreflectance spectrum of a GaAs/GaAlAs multiple quantum wellSolid State Communications, 1986
- Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theoryApplied Physics Letters, 1986
- Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctionsApplied Physics Letters, 1985