Transit-time-induced microwave negative resistance in Ga 1−x Al x as—GaAs heterostructure diodes

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Abstract
Following recent experimental observations by Immorlica and Pearson that the saturated drift velocity of electrons in Ga0.62Al0.38As is considerably lower than in GaAs, a heterostructure transit-time diode is proposed. The resulting device is shown to have a relatively large negative resistance, a small Q factor and low noise measure. Large-signal calculations predict a maximum efficiency of 18%.