Temperature modulated-SCLC, used for the study of the light induced, metastable density of states of a-Si:H
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 385-388
- https://doi.org/10.1016/0022-3093(85)90680-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The bulk trap spectroscopy of solids by temperature-modulated space-charge-limited currents (TMSCLC) in the steady stateJournal of Physics C: Solid State Physics, 1985
- Majority and minority carrier lifetimes in doped a-Si junctions and the energy of the dangling-bond statePhilosophical Magazine Part B, 1984
- Recombination processes in-Si:H: Spin-dependent photoconductivityPhysical Review B, 1983
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- Transient photoconductivity studies of the light soaked state of hydrogenated amorphous siliconApplied Physics Letters, 1983
- The correlation energy of the dangling silicon bond in a Si:HSolid State Communications, 1982
- Electron Spin Resonance of Doped Glow‐Discharge Amorphous SiliconPhysica Status Solidi (b), 1981
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977