Electrical characteristics of textured polysilicon oxide prepared by a low-temperature wafer loading and N/sub 2/ preannealing process
- 1 March 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (3) , 113-114
- https://doi.org/10.1109/55.215128
Abstract
A low-temperature wafer loading and N/sub 2/ preannealing process was used to grow a thin textured polysilicon oxide. The polyoxide grown on the heavily doped polysilicon film exhibits less oxide tunneling leakage current and higher dielectric strength when the top electrode is positively biased.Keywords
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