Indium phosphide accumulation-mode field-effect transistors

1 April 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (4) , 108-110
https://doi.org/10.1109/EDL.1983.25666

Abstract

Enhancement-type insulated gate field-effect transistors made of semi-insulating InP depend on the surface accumulation of electrons induced by a positive gate voltage and an equilibrium surface potential whose sign and magnitude are considered to be functions of the difference between charged surface donor and occupied acceptor states.

Keywords

INDIUM PHOSPHIDE
FETS
VOLTAGE
METAL-INSULATOR STRUCTURES
INSULATION
MISFETS
CONTACTS
DIELECTRIC SUBSTRATES
ELECTRONS
PREDICTIVE MODELS

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