Emitter and base fabrication in advanced bipolar transistors using gas immersion laser doping

Publisher Website

6 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 37-40
https://doi.org/10.1109/bipol.1988.51040

Abstract

No abstract available

Keywords

This publication has 1 reference indexed in Scilit:

High-speed polysilicon emitter—base bipolar transistor
IEEE Electron Device Letters, 1986