Determination of the dislocation densities in GaN on c-oriented sapphire
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
We report on a comprehensive study of the defect structure in GaN grown on c-oriented sapphire by gas source molecular beam epitaxy and metal organic vapour phase epitaxy. Transmission electron microscopy is used to investigate the defect structures which are dominated by threading dislocations perpendicular to the sapphire surface and stacking faults. Additionally, dislocation densities are determined. For determination of dislocation densities by x-ray diffraction we employ a model that uses the linewidth of x-ray rocking curves for this purpose. Finally, Rutherford backscattering spectrometry is performed to complement the structural investigation.Keywords
This publication has 4 references indexed in Scilit:
- Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN filmsApplied Physics Letters, 1996
- NH3 as Nitrogen Source in MBE growth of GaNMRS Proceedings, 1995
- High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodesJournal of Applied Physics, 1994
- The measurement of threading dislocation densities in semiconductor crystals by X-ray diffractionJournal of Crystal Growth, 1994