Defect strain fields in epitaxial GaAs
- 1 April 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 24-25, 562-564
- https://doi.org/10.1016/0168-583x(87)90708-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Dynamical x-ray diffraction from nonuniform crystalline films: Application to x-ray rocking curve analysisJournal of Applied Physics, 1986
- MeV ion damage in GaAs single crystals: Strain saturation and role of nuclear and electronic collisions in defect productionPhysical Review B, 1986
- Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAsApplied Physics Letters, 1982
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977