Floating Potential in Negative-Ion-Containing Plasma

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Abstract
For a feasibility study of low-energy etching at low pressures, the floating potential in negative-ion-containing plasma was theoretically investigated. The sheath equations into which the effect of the negative ion was incorporated was numerically solved. The results showed that the floating potential with respect to the plasma potential decreased in its absolute value with an increase in the negative ion concentration, and thus it is suggested that low-energy etching would be possible even in low-pressure plasma. A particular emphasis was given on the floating potential showing an abrupt decrease at a certain value of the negative ion concentration with relatively low negative ion temperature, and this was applicable to the digital etching technique.

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