Effect of high strain on noise characteristics in InAIAs/InGaAs pseudomorphic HEMT

8 October 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (21) , 2016-2018
https://doi.org/10.1049/el:19921292

Abstract

We have investigated the RF noise characteristics of an InGaAs HEMT having a highly strained channel. The characteristics were compared with those of a device having a lattice-matched channel. The indium mole fraction of the strained channel was 80%. While the DC and RF performances were significantly improved with the strained channel, the RF noise characteristics showed that the device with the strained channel had higher noise and a different dependence on bias current.

Keywords

HEMTS
STRAINED CHANNEL
SEMICONDUCTORS
DEPENDENCE ON BIAS CURRENT
RF PERFORMANCES
PSEUDOMORPHIC HEMT
HIGH STRAIN
DC PERFORMANCE
LATTICE-MATCHED CHANNEL
RF NOISE CHARACTERISTICS
INALAS-INGAAS

This publication has 1 reference indexed in Scilit:

The determination of device noise parameters
Proceedings of the IEEE, 1969